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ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A RDS(on) = 16.4 mΩ ISOPLUS 220TM Symbol Test Conditions VDSS VGS ID25 I D90 IS25 IS90 ID(RMS) EAS PD T J T JM T stg TL V ISOL FC Weight T J = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Not.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXUC100N055 |
IXYS Corporation |
55V Trench Power MOSFET |
|
| 2 | IXUC120N10 |
IXYS Corporation |
Trench Power MOSFET ISOPLUS220 |
|
| 3 | IXUC160N075 |
IXYS Corporation |
Trench Power MOSFET |
|
| 4 | IXUC160N075 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXUC200N055 |
IXYS Corporation |
Trench Power MOSFET ISOPLUS220 |
|
| 6 | IX0640CE |
ETC |
IX0640CE |
|
| 7 | IX150T06M-AG |
IXYS |
XPT IGBT |
|
| 8 | IX1779CE |
ETC |
IX1779CE Circuit |
|
| 9 | IX2113 |
IXYS |
600V High and Low Side Gate Driver |
|
| 10 | IX2120 |
IXYS |
1200V High and Low Side Gate Driver |
|
| 11 | IX2127 |
Clare |
High-Voltage Power MOSFET & IGBT Driver |
|
| 12 | IX2127 |
IXYS |
High-Voltage Power MOSFET/IGBT |
|