ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9.5 mΩ ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC .
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF) l Unclamped Inductive Switching (UIS) rated Applications Automotive 42V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e.g. starter generator - DC-DC converters, e.g. 12V to 42V, etc. l Power supplies - DC - DC converters - Solar i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXUC100N055 |
IXYS Corporation |
55V Trench Power MOSFET | |
2 | IXUC160N075 |
IXYS Corporation |
Trench Power MOSFET | |
3 | IXUC160N075 |
INCHANGE |
N-Channel MOSFET | |
4 | IXUC200N055 |
IXYS Corporation |
Trench Power MOSFET ISOPLUS220 | |
5 | IXUC60N10 |
IXYS |
Power MOSFET | |
6 | IX0640CE |
ETC |
IX0640CE | |
7 | IX150T06M-AG |
IXYS |
XPT IGBT | |
8 | IX1779CE |
ETC |
IX1779CE Circuit | |
9 | IX2113 |
IXYS |
600V High and Low Side Gate Driver | |
10 | IX2120 |
IXYS |
1200V High and Low Side Gate Driver | |
11 | IX2127 |
Clare |
High-Voltage Power MOSFET & IGBT Driver | |
12 | IX2127 |
IXYS |
High-Voltage Power MOSFET/IGBT |