IX150T06M-AG - IXYS

IX150T06M-AG XPT IGBT

Trench XPT IGBT Chip IX150T06M-AG tentative Type VCE [V] IX150T06M-AG 650 IC Chip Size Package [A] [mm] x [mm] 300 14.2 10.6 sawn on foil unsawn wafer in waffle pack Ordering Code tbd tbd tbd Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged Trench XPT design (Xtreme light .

Features

/ Advantages:
● Easy paralleling due to the positive temperature coefficient of the on-state voltage
● Rugged Trench XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 2x Ic - low EMI - Tvjm = 175°C
● Thin wafer technology combined with the XPT design results in a competitive low Vce(sat)
● Solderable/sinterable frontside metallization for highly reliable interconnection technology Mechanical Parameters Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioni.