ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 ISOPLUS220TM Electrically Isolated Back Surface VDSS = ID25 = RDS(on) = 75 V 160 A 6.5 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC =.
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Trench MOSFET - very fast lsowwitcRhDiSn(ogn) - usable intrinsic reverse diode z Low drain to tab capacitance(<15pF) z Unclamped Inductive Switching (UIS) rated Applications z Automotive 42V and 12V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e.g. starter generator - DC-DC converters, e.g. 12V to 42V, etc. z Power supplies - DC - DC .
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static drain-source on-resistance: R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXUC100N055 |
IXYS Corporation |
55V Trench Power MOSFET | |
2 | IXUC120N10 |
IXYS Corporation |
Trench Power MOSFET ISOPLUS220 | |
3 | IXUC200N055 |
IXYS Corporation |
Trench Power MOSFET ISOPLUS220 | |
4 | IXUC60N10 |
IXYS |
Power MOSFET | |
5 | IX0640CE |
ETC |
IX0640CE | |
6 | IX150T06M-AG |
IXYS |
XPT IGBT | |
7 | IX1779CE |
ETC |
IX1779CE Circuit | |
8 | IX2113 |
IXYS |
600V High and Low Side Gate Driver | |
9 | IX2120 |
IXYS |
1200V High and Low Side Gate Driver | |
10 | IX2127 |
Clare |
High-Voltage Power MOSFET & IGBT Driver | |
11 | IX2127 |
IXYS |
High-Voltage Power MOSFET/IGBT | |
12 | IX21844 |
IXYS |
High Voltage Half-Bridge Gate Driver |