IXTR30N25 - IXYS

IXTR30N25 Power MOSFET

Advance Technical Information Standard Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) IXTR 30N25 VDSS = ID (cont) = RDS(on) = 250 V 25 A 75 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol VDSS V DGR VGS V GSM ID25 I DM IAR EAR E AS dv/dt P D TJ TJM Tstg TL V ISOL Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditio.

Features

l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Rated for Unclamped Inductive Load Switching (UIS) Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly l Space savings l High power density © 2001 IXYS All rights reserved 98873 (12/01) Symbol g fs Ciss Coss Crss td(on) t r td(off) t f Qg(on) Qgs Q.