IXTR36P15P - IXYS

IXTR36P15P Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET (Electrically Isolated Tab) IXTC36P15P IXTR36P15P VDSS = -150V ID25 = - 22A RDS(on) ≤ 120mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C.

Features

z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z Battery Charger Applications © 2011 IXYS CORPORATION, All rights reserved DS99792A(01/11) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = -18A, Note 1 Ciss Coss Crss VGS = 0V, VDS .