IXTR30N25 |
Part Number | IXTR30N25 |
Manufacturer | IXYS |
Description | Advance Technical Information Standard Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) IXTR 30N25 VDSS = ID (cont) = RDS(on) = 250 V 25 A 75 mΩ N-Channel Enhancement Mode Avalanche Ra... |
Features |
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
l Low drain to tab capacitance(<30pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Rated for Unclamped Inductive Load
Switching (UIS)
Applications
l DC-DC converters l Battery chargers l Switched-mode and resonant-mode
power supplies l DC choppers l AC motor control
Advantages
l Easy assembly l Space savings l High power density
© 2001 IXYS All rights reserved
98873 (12/01)
Symbol
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Ciss Coss Crss td(on) t
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td(off) t
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Document |
IXTR30N25 Data Sheet
PDF 75.69KB |
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