IXTR16P60P - IXYS

IXTR16P60P Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR16P60P VDSS = ID25 = ≤RDS(on) - 600V - 10A 790mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Co.

Features

z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z The rugged PolarPTM process z Low QG z Low Drain-to-Tab capacitance z Low package inductance - easy to drive and to protect Applications z High side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment z Load-Switch Application z Fuel Injection Systems © 2008 IXYS CORPORATION, All rights reserved DS99989(5/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = -10V, ID = - 8A, Note 1 Ciss Coss.