IXTP8N70X2M - IXYS

IXTP8N70X2M Power MOSFET

Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N70X2M VDSS = ID25 =  RDS(on) 700V 8A 550m N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transien.

Features

 International Standard Package
 Plastic Overmolded Tab
 High Voltage Package
 Low RDS(ON) and QG
 Avalanche Rated
 2500V~ Electrical Isolation
 Low Package Inductance Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 PFC Circuits
 AC and DC Motor Drives
 Robotics and Servo Controls © 2018 IXYS CORPORATION, All Rights Reserved DS100755B(10/18) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 4A, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS .