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isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL.
·High power dissipation
·Static drain-source on-resistance:
RDS(on) ≤ 550mΩ@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4
IDM
Drain Current-Single Pulsed
16
PD
Total Dissipation @TC=25℃
32
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~125
UNIT V V A A W ℃ ℃
·THERMAL.
IXTP8N65X2M - IXYS
Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 6.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTP8N65X2 |
IXYS |
Power MOSFET |
|
| 2 | IXTP8N65X2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTP8N50P |
IXYS |
PolarHV Power MOSFET |
|
| 4 | IXTP8N50P |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTP8N70X2 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTP8N70X2 |
IXYS |
Power MOSFET |
|
| 7 | IXTP8N70X2M |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTP8N70X2M |
IXYS |
Power MOSFET |
|
| 9 | IXTP80N075L2 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IXTP80N075L2 |
IXYS |
Power MOSFET |
|
| 11 | IXTP80N10T |
IXYS |
Power MOSFET |
|
| 12 | IXTP80N10T |
INCHANGE |
N-Channel MOSFET |
|