TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14mΩ TO-263 AA (IXTA) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC =.
z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 100μA VGS = ± 20V, VDS = 0V VDS = 105V, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 105 2.5 5.0 ± 200 5 150 V V.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Stand.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTP80N12T2 |
IXYS |
Power MOSFET | |
2 | IXTP80N12T2 |
INCHANGE |
N-Channel MOSFET | |
3 | IXTP80N075L2 |
INCHANGE |
N-Channel MOSFET | |
4 | IXTP80N075L2 |
IXYS |
Power MOSFET | |
5 | IXTP86N20T |
INCHANGE |
N-Channel MOSFET | |
6 | IXTP86N20T |
IXYS |
Power MOSFET | |
7 | IXTP88N085T |
INCHANGE |
N-Channel MOSFET | |
8 | IXTP88N085T |
IXYS Corporation |
Power MOSFET | |
9 | IXTP8N50P |
IXYS |
PolarHV Power MOSFET | |
10 | IXTP8N50P |
INCHANGE |
N-Channel MOSFET | |
11 | IXTP8N65X2 |
IXYS |
Power MOSFET | |
12 | IXTP8N65X2 |
INCHANGE |
N-Channel MOSFET |