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isc N-Channel MOSFET Transistor IXTP80N075L2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 24mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUT.
·Static drain-source on-resistance:
RDS(on) ≤ 24mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converter
·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
80
IDM
Drain Current-Single Pulsed
180
PD
Total Dissipation @TC=25℃
357
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
.
IXTP80N075L2 - IXYS
Advance Technical Information LinearL2TM Power MOSFETs w/Extended FBSOA IXTA80N075L2 IXTP80N075L2 IXTH80N075L2 VDSS =.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTP80N10T |
IXYS |
Power MOSFET |
|
| 2 | IXTP80N10T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTP80N12T2 |
IXYS |
Power MOSFET |
|
| 4 | IXTP80N12T2 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTP86N20T |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTP86N20T |
IXYS |
Power MOSFET |
|
| 7 | IXTP88N085T |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTP88N085T |
IXYS Corporation |
Power MOSFET |
|
| 9 | IXTP8N50P |
IXYS |
PolarHV Power MOSFET |
|
| 10 | IXTP8N50P |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTP8N65X2 |
IXYS |
Power MOSFET |
|
| 12 | IXTP8N65X2 |
INCHANGE |
N-Channel MOSFET |
|