PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 5N60P IXTP 5N60P VDSS = 600 V ID25 = 5A RDS(on) ≤ 1.7 Ω Symbol V DSS E VDGR VGSS VGSM T ID25 IDM IAR EAR E EAS dv/dt L PD TJ TJM O Tstg T L TSOLD Md S Weight Test Conditions T J = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse wid.
Characteristic Values Min. Typ. Max. z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect 600 V V GS(th) V DS = V, GS I D = 50μA Advantages 3.0 5.5 V IGSS VGS = ±30 V, VDS = 0 V ±100 nA z Easy to mount z Space savings I DSS V =V DS DSS VGS = 0 V TJ = 125°C 5 μA z High power density 50 μA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.7 Ω © 2006 IXYS All rights reserved DS99426E(04/06) IXTA 5N60P IXTP 5N60P Symbol Test Conditions Characteristic Values.
isc N-Channel MOSFET Transistor IXTP5N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.7Ω@VGS=10V ·Fully .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTP5N50P |
IXYS Corporation |
Power MOSFET | |
2 | IXTP5N50P |
INCHANGE |
N-Channel MOSFET | |
3 | IXTP50N085T |
INCHANGE |
N-Channel MOSFET | |
4 | IXTP50N085T |
IXYS Corporation |
Power MOSFET | |
5 | IXTP50N20P |
IXYS Corporation |
Power MOSFET | |
6 | IXTP50N20P |
INCHANGE |
N-Channel MOSFET | |
7 | IXTP50N20PM |
INCHANGE |
N-Channel MOSFET | |
8 | IXTP50N20PM |
IXYS |
Power MOSFET | |
9 | IXTP50N25T |
IXYS |
Trench Gate Power MOSFET | |
10 | IXTP52P10P |
INCHANGE |
P-Channel MOSFET | |
11 | IXTP52P10P |
IXYS Corporation |
P-Channel MOSFET | |
12 | IXTP55N075T |
INCHANGE |
N-Channel MOSFET |