IXTP5N50P - IXYS Corporation

IXTP5N50P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Widt.

Features

 International Standard Packages
 Low QG
 Avalanche Rated
 Low Package Inductance
 Fast Intrinsic Rectifier Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 DC-DC Converters
 Switch-Mode and Resonant-Mode Power Supplies
 AC and DC Motor Drives
  Discharge Circiuts in Lasers, Spark Igniters, RF Generators
High Voltage Pulse Power Applications DS99446G(6/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Qg(on) Qgs VGS = 10V, VDS .