IXTP50N25T - IXYS

IXTP50N25T Trench Gate Power MOSFET

Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 250V 50A 60mΩ TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR V GSM ID25 IDM IA EAS PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transien.

Features

z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Coverters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications © 2010 IXYS CORPORATION, All Rights Reserved DS99346B(01/10) IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS= 10V, ID = 0.5
• ID25, Note 1 Characteristic Valu.