IXTP52P10P - IXYS Corporation

IXTP52P10P P-Channel MOSFET

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P TO-263 AA (IXTA) TO-220AB (IXTP) D G S D (Tab) GD S D (Tab) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximu.

Features

z International Standard Packages z Fast Intrinsic Diode z Dynamic dv/dt Rated z Avalanche Rated z Rugged PolarPTM Process z Low QG and Rds(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push-Pull Amplifiers z DC Choppers z Current Regulators z Automatic Test Equipment © 2013 IXYS CORPORATION, All Rights Reserved DS99912C(01/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, f = 1.