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isc N-Channel MOSFET Transistor IXTP20N65XM ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 210mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE M.
·High power dissipation
·Static drain-source on-resistance:
RDS(on) ≤ 210mΩ@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·AC and DC Motor Drives
·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
9
IDM
Drain Current-Single Pulsed
40
PD
Total Dissipation @TC=25℃
63
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~.
IXTP20N65XM - IXYS
X-Class Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTP20N65XM VDSS = ID25 = RDS(on) 650V .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTP20N65X |
IXYS |
Power MOSFET |
|
| 2 | IXTP20N65X |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTP200N055T2 |
IXYS |
Power MOSFET |
|
| 4 | IXTP200N055T2 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTP200N075T |
IXYS |
Power MOSFET |
|
| 6 | IXTP200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTP200N085T |
IXYS |
Power MOSFET |
|
| 8 | IXTP200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXTP220N04T2 |
IXYS |
Power MOSFET |
|
| 10 | IXTP220N04T2 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTP220N055T |
IXYS |
Power MOSFET |
|
| 12 | IXTP220N055T |
INCHANGE |
N-Channel MOSFET |
|