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isc N-Channel MOSFET Transistor IXTP200N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIM.
·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
200
IDM
Drain Current-Single Pulsed
540
PD
Total Dissipation @TC=25℃
430
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~17.
IXTP200N075T - IXYS
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA200N075T IXTP200N075T N-Channel Enhancement Mode Avalan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTP200N055T2 |
IXYS |
Power MOSFET |
|
| 2 | IXTP200N055T2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTP200N085T |
IXYS |
Power MOSFET |
|
| 4 | IXTP200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTP20N65X |
IXYS |
Power MOSFET |
|
| 6 | IXTP20N65X |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTP20N65XM |
IXYS |
Power MOSFET |
|
| 8 | IXTP20N65XM |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXTP220N04T2 |
IXYS |
Power MOSFET |
|
| 10 | IXTP220N04T2 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTP220N055T |
IXYS |
Power MOSFET |
|
| 12 | IXTP220N055T |
INCHANGE |
N-Channel MOSFET |
|