Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 40V 220A 3.5mΩ TO-263 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limi.
z International Standard Packages z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Low RDS(on)
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
• Synchronous Buck Converters
• High Current Switching Power
Supplies
• Battery Powered Electric Motors
• Resonant-Mode Power Supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
© 2008 IXYS CORPORATION, All rights reserved
DS99918C(11/08)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 2.
IXTP220N04T2 - INCHANGE
isc N-Channel MOSFET Transistor IXTP220N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.5mΩ@VGS=10V ·Fu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTP220N055T |
IXYS |
Power MOSFET |
|
| 2 | IXTP220N055T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTP220N075T |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXTP220N075T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTP200N055T2 |
IXYS |
Power MOSFET |
|
| 6 | IXTP200N055T2 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTP200N075T |
IXYS |
Power MOSFET |
|
| 8 | IXTP200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXTP200N085T |
IXYS |
Power MOSFET |
|
| 10 | IXTP200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTP20N65X |
IXYS |
Power MOSFET |
|
| 12 | IXTP20N65X |
INCHANGE |
N-Channel MOSFET |
|