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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N055T IXTP220N055T VDSS = ID25 = RDS(on) ≤ 55 220 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Cur.
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99517 (11/06) Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td.
IXTP220N055T - INCHANGE
isc N-Channel MOSFET Transistor IXTP220N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V ·Fu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTP220N04T2 |
IXYS |
Power MOSFET |
|
| 2 | IXTP220N04T2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTP220N075T |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXTP220N075T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTP200N055T2 |
IXYS |
Power MOSFET |
|
| 6 | IXTP200N055T2 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTP200N075T |
IXYS |
Power MOSFET |
|
| 8 | IXTP200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXTP200N085T |
IXYS |
Power MOSFET |
|
| 10 | IXTP200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTP20N65X |
IXYS |
Power MOSFET |
|
| 12 | IXTP20N65X |
INCHANGE |
N-Channel MOSFET |
|