IXTH8P50 - IXYS Corporation

IXTH8P50 P-Channel MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 8P50 IXTT 8P50 VDSS = -500 V ID25 = -8 A RDS(on) = 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) TO-247 (IXTH) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, .

Features

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance (<5 nH) - easy to drive and to protect Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVVGSDS=S T0eVm,pIDer=at-u2r5e0CµoAefficient VVGDSS(th=) TVeGmS,pIeDra=tu-2re50CoµeAfficient VGS = ±20 VDC, VDS = 0 V V DS GS = 0.8
• =0V VDSS TTJJ = = 25°C 125°C VGS = -10 V, ID = 0.5
• ID25 7P50 8P50 RDS(on) Temperature Coefficient -500 0.054 -3.0 -5.0 -0.122 ±100 -200 .