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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor .
·Drain Source Voltage-
: VDSS= 300V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 40mΩ(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switch-Mode and Resonant-Mode Power Supplies
·DC-DC Converters
·AC and DC Motor Drives
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
300
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
88
A
IDM
Drain Current-Single Plused
220
A
PD
Total Dissipation @TC=25℃
600
W
Tj
Max. .
IXTH88N30P - IXYS
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DS.
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|---|---|---|---|---|
| 1 | IXTH88N15 |
IXYS Corporation |
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| 2 | IXTH88N15 |
INCHANGE |
N-Channel MOSFET |
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| 3 | IXTH80N075L2 |
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| 4 | IXTH80N075L2 |
INCHANGE |
N-Channel MOSFET |
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| 5 | IXTH80N20L |
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| 6 | IXTH80N20L |
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N-Channel MOSFET |
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| 7 | IXTH80N65X2 |
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| 8 | IXTH86N25T |
INCHANGE |
N-Channel MOSFET |
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| 9 | IXTH86N25T |
IXYS |
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| 10 | IXTH8P50 |
IXYS Corporation |
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| 11 | IXTH02N250 |
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High Voltage Power MOSFETs |
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| 12 | IXTH02N450HV |
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|