X2-Class Power MOSFET Preliminary Technical Information IXTH80N65X2 VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse W.
International Standard Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100674A(10/15)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5
• ID25, Note 1
RGi Gate Input Resistance
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er) Co(tr)
Effective Output Capacitance
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTH80N075L2 |
IXYS |
Power MOSFET | |
2 | IXTH80N075L2 |
INCHANGE |
N-Channel MOSFET | |
3 | IXTH80N20L |
IXYS |
Power MOSFET | |
4 | IXTH80N20L |
INCHANGE |
N-Channel MOSFET | |
5 | IXTH86N25T |
INCHANGE |
N-Channel MOSFET | |
6 | IXTH86N25T |
IXYS |
Power MOSFET | |
7 | IXTH88N15 |
IXYS Corporation |
High Current Power MOSFET | |
8 | IXTH88N15 |
INCHANGE |
N-Channel MOSFET | |
9 | IXTH88N30P |
IXYS |
PolarHT Power MOSFET | |
10 | IXTH88N30P |
INCHANGE |
N-Channel MOSFET | |
11 | IXTH8P50 |
IXYS Corporation |
P-Channel MOSFET | |
12 | IXTH02N250 |
IXYS |
High Voltage Power MOSFETs |