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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 = RDS(on) ≤ 250V 86A 37mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAS EAS PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25.
(TAB)
D = Drain TAB = Drain
z International standard packages z Avalanche rated z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount z Space savings z High power density
Applications
z DC-DC converters z Battery chargers z Switched-mode and resonant-mode
power supplies z DC choppers z AC motor control z Uninterruptible power supplies
DS99784A(10/07)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
g fs
V DS
=
10V,
I D
=
0.5
•
I,
D25
Note
1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Time.
IXTH86N25T - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance :.
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