IXTC75N10 - IXYS Corporation

IXTC75N10 N-Channel MOSFET

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION MegaMOSTMFET N-Channel Enhancement Mode IXTC 75N10 VDSS = 100 V = 72 A ID25 RDS(on) = 20 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximu.

Features

l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.020 V V nA µA mA Ω Advantages l l l l l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA V DS = VGS, ID = 250 µA V GS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS VGS = 0 .