IXTC180N085T - INCHANGE

IXTC180N085T N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTC180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIM.

Features

·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 85 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 430 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~17.