Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA7N60PM IXTP7N60PM VDSS ID25 RDS(on) = 600V = 4A ≤ 1.1Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 M.
g V V Ω r e .n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 ... +150 150 - 55 ... +150 ce. °C °C °C °C °C Nm/lb.in. Plastic overmolded tab for electrical isolation International standard package Avanlanche rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications ±100 nA 5 μA 50 μA DS99950(06/08) http://www.D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTA7N60P |
IXYS |
Power MOSFET | |
2 | IXTA7N60P |
INCHANGE |
N-Channel MOSFET | |
3 | IXTA70N075T2 |
IXYS |
Power MOSFET | |
4 | IXTA70N075T2 |
INCHANGE |
N-Channel MOSFET | |
5 | IXTA70N085T |
INCHANGE |
N-Channel MOSFET | |
6 | IXTA70N085T |
IXYS Corporation |
Power MOSFET | |
7 | IXTA75N10P |
IXYS |
N-Channel MOSFET | |
8 | IXTA75N10P |
INCHANGE |
N-Channel MOSFET | |
9 | IXTA76N075T |
INCHANGE |
N-Channel MOSFET | |
10 | IXTA76N075T |
IXYS Corporation |
Power MOSFET | |
11 | IXTA76N25T |
INCHANGE |
N-Channel MOSFET | |
12 | IXTA76N25T |
IXYS |
Power MOSFET |