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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·A.
·Static drain-source on-resistance:
RDS(on) ≤ 1.1Ω@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converter
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
7
IDM
Drain Current-Single Pulsed
14
PD
Total Dissipation @TC=25℃
150
Tj
Operating Junction Temperature
-55~150
Tstg
St.
IXTA7N60P - IXYS
PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RD.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTA7N60PM |
IXYS Corporation |
Power MOSFET |
|
| 2 | IXTA70N075T2 |
IXYS |
Power MOSFET |
|
| 3 | IXTA70N075T2 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTA70N085T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTA70N085T |
IXYS Corporation |
Power MOSFET |
|
| 6 | IXTA75N10P |
IXYS |
N-Channel MOSFET |
|
| 7 | IXTA75N10P |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTA76N075T |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXTA76N075T |
IXYS Corporation |
Power MOSFET |
|
| 10 | IXTA76N25T |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTA76N25T |
IXYS |
Power MOSFET |
|
| 12 | IXTA76P10T |
IXYS |
Power MOSFET |
|