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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(.
·Static drain-source on-resistance:
RDS(on) ≤ 39mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Speed Power Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
76
IDM
Drain Current-Single Pulsed
170
PD
Total Dissipation @TC=25℃
300
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55.
IXTA76N25T - IXYS
TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTA76N075T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTA76N075T |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXTA76P10T |
IXYS |
Power MOSFET |
|
| 4 | IXTA70N075T2 |
IXYS |
Power MOSFET |
|
| 5 | IXTA70N075T2 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTA70N085T |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTA70N085T |
IXYS Corporation |
Power MOSFET |
|
| 8 | IXTA75N10P |
IXYS |
N-Channel MOSFET |
|
| 9 | IXTA75N10P |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IXTA7N60P |
IXYS |
Power MOSFET |
|
| 11 | IXTA7N60P |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IXTA7N60PM |
IXYS Corporation |
Power MOSFET |
|