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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(on) = ≤ 70 13.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse w.
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99639 (11/06) IXTA70N085T IXTP70N085T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1 Ciss Coss Crss VGS = 0.
IXTA70N085T - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully character.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTA70N075T2 |
IXYS |
Power MOSFET |
|
| 2 | IXTA70N075T2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTA75N10P |
IXYS |
N-Channel MOSFET |
|
| 4 | IXTA75N10P |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTA76N075T |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTA76N075T |
IXYS Corporation |
Power MOSFET |
|
| 7 | IXTA76N25T |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTA76N25T |
IXYS |
Power MOSFET |
|
| 9 | IXTA76P10T |
IXYS |
Power MOSFET |
|
| 10 | IXTA7N60P |
IXYS |
Power MOSFET |
|
| 11 | IXTA7N60P |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IXTA7N60PM |
IXYS Corporation |
Power MOSFET |
|