www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE(sat) = 2.5 V Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transien.
• International standard package
• Guaranteed Short Circuit SOA capability
• Low VCE(sat) - for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on - drive simplicity
• Fast fall time for switching speeds up to 20 kHz Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding Advantages
• High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 7.0 150 1 ± 100 2.5 V µA mA nA V
VGE(th) ICES IGES VCE(sat)
IC
= 750 µA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXSH30N60B |
IXYS Corporation |
High Speed IGBT | |
2 | IXSH30N60BD1 |
IXYS Corporation |
High Speed IGBT | |
3 | IXSH30N60 |
IXYS Corporation |
Low VCE(sat) IGBT | |
4 | IXSH30N60A |
IXYS Corporation |
Low VCE(sat) IGBT | |
5 | IXSH30N60C |
IXYS Corporation |
High Speed IGBT | |
6 | IXSH30N60CD1 |
IXYS Corporation |
Short Circuit SOA Capability | |
7 | IXSH35N120A |
IXYS |
High Voltage High speed IGBT | |
8 | IXSH35N120B |
IXYS Corporation |
IGBT | |
9 | IXSH35N140A |
IXYS |
High Voltage High speed IGBT | |
10 | IXSH10N60B2D1 |
IXYS |
High-Speed IGBT | |
11 | IXSH15N120A |
IXYS Corporation |
IGBT | |
12 | IXSH15N120AU1 |
IXYS Corporation |
IGBT |