High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C Short Circuit SOA Capability VCES ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V.
l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 100 1 ± 100 30N60B 30N60C 2.0 2.5 V V µA mA nA V V l l l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 2.5 mA, VCE = VGE AC motor speed control DC servo an.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXSH30N60 |
IXYS Corporation |
Low VCE(sat) IGBT | |
2 | IXSH30N60A |
IXYS Corporation |
Low VCE(sat) IGBT | |
3 | IXSH30N60B2D1 |
IXYS |
High Speed IGBT with Diode | |
4 | IXSH30N60BD1 |
IXYS Corporation |
High Speed IGBT | |
5 | IXSH30N60C |
IXYS Corporation |
High Speed IGBT | |
6 | IXSH30N60CD1 |
IXYS Corporation |
Short Circuit SOA Capability | |
7 | IXSH35N120A |
IXYS |
High Voltage High speed IGBT | |
8 | IXSH35N120B |
IXYS Corporation |
IGBT | |
9 | IXSH35N140A |
IXYS |
High Voltage High speed IGBT | |
10 | IXSH10N60B2D1 |
IXYS |
High-Speed IGBT | |
11 | IXSH15N120A |
IXYS Corporation |
IGBT | |
12 | IXSH15N120AU1 |
IXYS Corporation |
IGBT |