IXSH25N100 - IXYS Corporation

IXSH25N100 Low VCE(sat) IGBT

VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Capability www.DataSheet4U.com Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 4.7 Ω Cl.

Features

International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 2.5 mA, VCE = VGE V CE = 0.8
• VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Applications AC motor speed control Uninterruptible power supplies (UPS) Welding q q q q q Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power densit.