IXSH24N60U1 - IXYS Corporation

IXSH24N60U1 HiPerFASTTM IGBT with Diode

HiPerFASTTM IGBT with Diode Short Circuit SOA Capability IXSH 24N60U1 IXSH 24N60AU1 VCES 600 V 600 V IC25 VCE(sat) 48 A 2.2 V 48 A 2.7 V Symbol V CES V CGR V GES V GEM I C25 I C90 ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM T stg Test Conditions T J = 25 ° C to 150 ° C600 T J = 25 ° C to 150 ° C; R GE = 1 M W Continuous Transient TC = 25 ° C TC = 90 ° C TC.

Features

ms W °C °C °C °C °C
• International standard package JEDEC TO-247 AD
• High frequency IGBT and anti-parallel FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat) - for minimum on-state conduction losses
• MOS Gate turn-on - drive simplicity
• Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
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• AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies C (TAB) G E G = Gate, E = Emitter, C C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.