Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns TO-247 AD G C E C G C (TAB) C = Collector, TAB = Collector E G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125.
q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum current distribution when paralleled Epoxy of TO 247 package meets UL 94V-0 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 3.0 4 3.0 500 80 100 380 75 3.6 2.1 4 150 58 840 3.1 8 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC A ns 0.42 K/W Applicatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXRH50N100 |
IXYS Corporation |
IGBT with Reverse Blocking capability | |
2 | IXRH50N120 |
IXYS Corporation |
IGBT with Reverse Blocking capability | |
3 | IXRH50N80 |
IXYS Corporation |
IGBT with Reverse Blocking capability | |
4 | IXRH40N120 |
IXYS Corporation |
Power Discretes/IGBTs/Reverse Blocking Series | |
5 | IXR100 |
Burr-Brown Corporation |
Isolated / Self-Powered / Temperature Sensor Conditioning 4-20mA TWO-WIRE TRANSMITTER | |
6 | IXRA15N120 |
IXYS |
IGBT | |
7 | IXRFD615X2 |
IXYS |
15A Dual Low-Side RF MOSFET Driver | |
8 | IXRFD630 |
IXYS |
30A Low-Side RF MOSFET Driver | |
9 | IXRFDSM607X2 |
IXYS |
15 A Low-Side RF MOSFET Driver | |
10 | IXRP15N120 |
IXYS |
IGBT with Reverse Blocking capability | |
11 | IX0640CE |
ETC |
IX0640CE | |
12 | IX150T06M-AG |
IXYS |
XPT IGBT |