IXRH50N100 - IXYS Corporation

IXRH50N100 IGBT with Reverse Blocking capability

Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns TO-247 AD G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C G C (TAB) IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = .

Features

q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum current distribution when paralleled Epoxy of TO 247 package meets UL 94V-0 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 3.0 4 3.0 500 80 100 380 75 3.6 2.1 4 150 58 840 3.1 8 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC A ns 0.42 K/W Applicatio.