Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
www.DataSheet4U.com IXRH 40N120 IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G C E G E C (TAB) C = Collector, TAB = Collector G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = .
• IGBT with NPT (non punch through) structure
• reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery
• positive temperature coefficient of saturation voltage
• Epoxy of TO-247 package meets UL 94V-0 Applications converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwis.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXRH50N100 |
IXYS Corporation |
IGBT with Reverse Blocking capability |
|
| 2 | IXRH50N120 |
IXYS Corporation |
IGBT with Reverse Blocking capability |
|
| 3 | IXRH50N60 |
IXYS Corporation |
IGBT with Reverse Blocking capability |
|
| 4 | IXRH50N80 |
IXYS Corporation |
IGBT with Reverse Blocking capability |
|
| 5 | IXR100 |
Burr-Brown Corporation |
Isolated / Self-Powered / Temperature Sensor Conditioning 4-20mA TWO-WIRE TRANSMITTER |
|
| 6 | IXRA15N120 |
IXYS |
IGBT |
|
| 7 | IXRFD615X2 |
IXYS |
15A Dual Low-Side RF MOSFET Driver |
|
| 8 | IXRFD630 |
IXYS |
30A Low-Side RF MOSFET Driver |
|
| 9 | IXRFDSM607X2 |
IXYS |
15 A Low-Side RF MOSFET Driver |
|
| 10 | IXRP15N120 |
IXYS |
IGBT with Reverse Blocking capability |
|
| 11 | IX0640CE |
ETC |
IX0640CE |
|
| 12 | IX150T06M-AG |
IXYS |
XPT IGBT |
|