IXKN45N80C - IXYS Corporation

IXKN45N80C CoolMOS Power MOSFET

www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET IXKN 45N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 800 V ID25 44 A RDS(on) 74 mΩ MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 17 A;diF/dt≤ 100 A/µs TVJ = 150°C ID = 4 A; L = 80 mH; TC = 25°C ID = 17 A; L = 3 µH; TC = 25°.

Features

● RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 4 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 640 V; ID = 70 A miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanc.