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High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet IXGH 25N160 IXGT 25N160 VCES = 1600 V IC25 = 75 A VCE(sat) = 2.5 V www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, V.
High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure International standard packages - JEDEC TO-268 and - JEDEC TO-247 AD Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge Pulser circuits Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (TO-247) TO-247 TO-268 1.13/10 N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXGT20N100 |
IXYS |
IGBT |
|
| 2 | IXGT20N120 |
IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT |
|
| 3 | IXGT20N120B |
IXYS |
High Voltage IGBT |
|
| 4 | IXGT20N140C3H1 |
IXYS |
GenX3 1400V IGBTs |
|
| 5 | IXGT20N60B |
IXYS Corporation |
(IXGH20N60B / IXGT20N60B) HiPerFAST IGBT |
|
| 6 | IXGT20N60BD1 |
IXYS Corporation |
(IXGH20N60BD1 / IXGT20N60BD1) HiPerFAST IGBT with Diode |
|
| 7 | IXGT24N170 |
IXYS Corporation |
High Voltage IGBT |
|
| 8 | IXGT24N170A |
IXYS |
High Voltage IGBT |
|
| 9 | IXGT24N170AH1 |
IXYS |
High Voltage IGBT |
|
| 10 | IXGT24N60C |
IXYS Corporation |
HiPerFAST IGBT Lightspeed Series |
|
| 11 | IXGT24N60CD1 |
IXYS Corporation |
HiPerFAST IGBT |
|
| 12 | IXGT28N120B |
IXYS Corporation |
High Voltage IGBT |
|