IXGT24N60CD1 - IXYS Corporation

IXGT24N60CD1 HiPerFAST IGBT

HiPerFASTTM IGBT with Diode Lightspeed Series Preliminary data IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L =.

Features

• International standard packages JEDEC TO-247 and surface mountable TO-268
• High frequency IGBT
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on - drive simplicity
• Fast recovery expitaxial Diode (FRED) - soft recovery with low IRM Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers Advantages
• High power density
• Very fast switching speeds for high frequency applications BVCES VGE(th) ICES IGES VCE(sat) IC IC = 750 .