IXGT20N100 - IXYS

IXGT20N100 IGBT

IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg www.DataSheet.co.kr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 47 W C.

Features

°C G = Gate, E = Emitter, C E C (TAB) C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
• International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD
• High current handling capability
• MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V BVCES.