www.DataSheet4U.com IGBT Preliminary Data Sheet IXGH 20N120 VCES IXGT 20N120 IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = .
V V V V A A A A
G E G DS
TO-247 (IXGH)
TO-268 (IXGT)
DataShee
C (TAB)
DataSheet4U.com
-55 ... +150 150 -55 ... +150 300 260
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md Weight Mounting torque (TO-247) TO-247 TO-268
•International
standard packages
1.13/10 Nm/lb.in. 6 5 g g
JEDEC TO-247 and TO-268
•High current handling capability
•MOS Gate turn-on
- drive simplicity Applications
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IC = 1 mA, VGE = 0 V IC = 250 µA, VCE = VGE VCE = V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGT20N120B |
IXYS |
High Voltage IGBT | |
2 | IXGT20N100 |
IXYS |
IGBT | |
3 | IXGT20N140C3H1 |
IXYS |
GenX3 1400V IGBTs | |
4 | IXGT20N60B |
IXYS Corporation |
(IXGH20N60B / IXGT20N60B) HiPerFAST IGBT | |
5 | IXGT20N60BD1 |
IXYS Corporation |
(IXGH20N60BD1 / IXGT20N60BD1) HiPerFAST IGBT with Diode | |
6 | IXGT24N170 |
IXYS Corporation |
High Voltage IGBT | |
7 | IXGT24N170A |
IXYS |
High Voltage IGBT | |
8 | IXGT24N170AH1 |
IXYS |
High Voltage IGBT | |
9 | IXGT24N60C |
IXYS Corporation |
HiPerFAST IGBT Lightspeed Series | |
10 | IXGT24N60CD1 |
IXYS Corporation |
HiPerFAST IGBT | |
11 | IXGT25N160 |
IXYS |
High Voltage IGBT | |
12 | IXGT28N120B |
IXYS Corporation |
High Voltage IGBT |