·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 170 W TJ Max. Operating Junction Temp.
·Drain Current : ID= 26A@ TC=25℃
·Drain Source Voltage
: VDSS= 300V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 66mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
300
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
26
A
IDM
Drain Current-Single Pluse
40
A
PD
Total Dissipation @TC=25℃
170
W
TJ
Max. Operating Jun.
X3-Class HiPERFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFY26N30X3 IXFA26N30X3 IXFP26N30X3 D G S .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFY36N20X3 |
IXYS |
Power MOSFET | |
2 | IXFY36N20X3 |
INCHANGE |
N-Channel MOSFET | |
3 | IXFY4N85X |
IXYS |
Power MOSFET | |
4 | IXFY8N65X2 |
IXYS |
Power MOSFET | |
5 | IXFY8N65X2 |
INCHANGE |
N-Channel MOSFET | |
6 | IXF18102 |
Intel Corporation |
10Gbps Physical Layer Device | |
7 | IXF18104 |
Intel Corporation |
10 Gigabit Lan PHY | |
8 | IXFA102N15T |
IXYS Corporation |
Power MOSFET | |
9 | IXFA102N15T |
INCHANGE |
N-Channel MOSFET | |
10 | IXFA10N60P |
IXYS Corporation |
Polar MOSFETs | |
11 | IXFA10N80P |
IXYS Corporation |
Power MOSFET | |
12 | IXFA110N15T2 |
IXYS Corporation |
Power MOSFET |