PolarTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK220N15P IXFX220N15P VDSS ID25 RDS(on) trr = = ≤ ≤ 150V 220A 9mΩ 200ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continu.
z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150°C Characteristic Values Min. Typ. Max. 150 2.5 4.5 ±200 V V nA DC-DC Converters Ba.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFX220N17T2 |
IXYS Corporation |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
2 | IXFX200N10P |
IXYS |
Polar HiPerFET Power MOSFET | |
3 | IXFX20N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFX20N120P |
IXYS Corporation |
Power MOSFET | |
5 | IXFX210N17T |
IXYS |
GigaMOS Power MOSFET | |
6 | IXFX210N17T |
IXYS |
GigaMOS Power MOSFET | |
7 | IXFX21N100F |
IXYS Corporation |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching | |
8 | IXFX21N100Q |
IXYS |
HiPerFET Power MOSFET | |
9 | IXFX230N20T |
IXYS |
GigaMOS Power MOSFET | |
10 | IXFX230N20T |
IXYS |
GigaMOS Power MOSFET | |
11 | IXFX240N15T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
12 | IXFX240N15T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET |