IXFX20N120P - IXYS Corporation

IXFX20N120P Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V  30 V  40 V TC = .

Features

 Fast Intrinsic Diode
 Dynamic dv/dt Rating
 Avalanche Rated
 Low RDS(ON) and QG
 Low Package Inductance Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 Discharger Circuits in Lesers Pulsers, Spark Igniters, RF Generators
 High Voltage Pulse Power Supplies
 AC and DC Motor Drives
 High Speed Power Switching Application © 2019 IXYS CORPORATION,All rights reserved DS99854C(12/19) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
• ID25, Note 1 Ciss .