IXFX21N100F - IXYS Corporation

IXFX21N100F HiPerRF Power MOSFETs F-Class: MegaHertz Switching

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 21N100F IXFK 21N100F VDSS = 1000 V ID25 = 21 A RDS(on) = 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.

Features

l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l PLUS 247TM package for clip or spring mounting l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 .