IXFX20N120 - IXYS Corporation

IXFX20N120 HiPerFET Power MOSFETs

Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 20N120 IXFX 20N120 VDSS ID25 RDS(on) = 1200 V = 20 A = 0.75 Ω trr ≤ 300 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C .

Features

z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting z Space savings z High power density z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.