PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr ≤ 250 ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSS VDGR V GS VGSM ID25 IDM IAR E AR EAS T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, .
D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 μA VGS(th) VDS = VGS, ID = 2.5 mA Characteristic Values Min. Typ. Max. 800 V 3.0 5.5 V z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect IGSS I DSS RDS(on) VGS = ±30 V, VDS = 0 V V =V DS DSS V =0V GS T J = 125°C VGS = 10 V, ID = 0.5 ID25 , Note 1 ±100 nA 25 μA Advantages 250 μA z Easy to mount 0.85 Ω z Space savings z High power density © 2006 IXYS All rights re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFV12N80P |
IXYS |
Power MOSFET | |
2 | IXFV12N100P |
IXYS Corporation |
Polar HiPerFET Power MOSFETs | |
3 | IXFV12N100PS |
IXYS Corporation |
Polar HiPerFET Power MOSFETs | |
4 | IXFV110N10P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
5 | IXFV110N10PS |
IXYS |
PolarHT HiPerFET Power MOSFET | |
6 | IXFV110N25T |
IXYS Corporation |
Trench Gate Power HiperFET | |
7 | IXFV110N25TS |
IXYS Corporation |
Trench Gate Power HiperFET | |
8 | IXFV14N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
9 | IXFV14N80PS |
IXYS Corporation |
Power MOSFET | |
10 | IXFV15N100P |
IXYS Corporation |
Power MOSFET | |
11 | IXFV15N100PS |
IXYS Corporation |
Power MOSFET | |
12 | IXFV16N80P |
IXYS Corporation |
PolarHV Power MOSFET |