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IXFV12N80PS |
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| Part Number | IXFV12N80PS |
| Manufacturer | IXYS |
| Description | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr ≤ 250 ns TO-247 (IXFH) Symbol Test Conditions ... |
| Features |
D (TAB)
D = Drain TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV DSS
V GS
=
0
V,
I
D
=
250
μA
VGS(th)
VDS = VGS, ID = 2.5 mA
Characteristic Values Min. Typ. Max.
800 V
3.0 5.5 V
z International standard packages z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
IGSS I
DSS
RDS(on)
VGS = ±30 V, VDS = 0 V
V =V DS DSS
V =0V GS
T J
=
125°C
VGS = 10 V, ID = 0.5 ID25 , Note 1
±100 nA
25 μA Advantages
250 μA z Easy to mount
0.85
Ω z Space savings z High power density
© 2006 IXYS All rights re... |
| Document |
 IXFV12N80PS Data Sheet
PDF 166.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFV12N80P |
IXYS |
Power MOSFET |
|
| 2 | IXFV12N100P |
IXYS Corporation |
Polar HiPerFET Power MOSFETs |
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| 3 | IXFV12N100PS |
IXYS Corporation |
Polar HiPerFET Power MOSFETs |
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| 4 | IXFV110N10P |
IXYS |
PolarHT HiPerFET Power MOSFET |
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| 5 | IXFV110N10PS |
IXYS |
PolarHT HiPerFET Power MOSFET |
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