IXFV15N100P - IXYS Corporation

IXFV15N100P Power MOSFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 15A 760mΩ 300ns PLUS220 (IXFV) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ .

Features

z z D = Drain TAB = Drain Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) Mounting force (PLUS 220) TO-247 PLUS 220 types 300 260 1.13/10 11..65/2.5..14.6 6 4 z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C 670 Characteristic Values Min. Typ. Max. 1000 3.